Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence?
نویسندگان
چکیده
Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.
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